IPF090N03LG - Infineon

IPF090N03LG Power-Transistor

Type IPD090N03L G IPS090N03L G IPF090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-f.

Features

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant IPD090N03L G Type
• Avalanche rated
• Pb-free plating; RoHS compliant IPF090N03L G 1) Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A IPS090N03L G IPU090N03L G Package Marking PG-TO252-3-11 090N03L PG-TO252-3-23 090N03L PG-TO251-3-11 090N03L PG-TO251-3-21 090N03L Maximum ratings, at T j=25 °C, .