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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•N-channel,normallevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowreverserecoverycharge(Qrr)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Optimizedforhighfrequencyswitching
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
1.9
mΩ
ID
254
A
Qoss
267
nC
QG
113
nC
Qrr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPF014N08NF2S |
Infineon |
MOSFET |
|
| 2 | IPF016N06NF2S |
Infineon |
MOSFET |
|
| 3 | IPF017N08NF2S |
Infineon |
MOSFET |
|
| 4 | IPF009N04NF2S |
Infineon |
MOSFET |
|
| 5 | IPF021N13NM6 |
Infineon |
MOSFET |
|
| 6 | IPF04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 7 | IPF050N03L |
Infineon Technologies |
Fast switching MOSFET |
|
| 8 | IPF050N03LG |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPF05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 10 | IPF060N03LG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPF067N20NM6 |
Infineon |
MOSFET |
|
| 12 | IPF06N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|