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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),max ID QOSS QG(0V...
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPD053N06N
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 5.3 mW 45 A
32 nC 27 nC
PG-TO252-3
Type IPD053N06N
Package PG-TO252-3
Marking 053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
45 .
IPD053N06N - INCHANGE
isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·En.
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|---|---|---|---|---|
| 1 | IPD053N06N3G |
Infineon Technologies |
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| 2 | IPD053N08N3 |
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| 3 | IPD053N08N3 |
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| 4 | IPD053N08N3G |
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