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IPD053N06N |
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| Part Number | IPD053N06N |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t... |
| Features |
• Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 5.3 mW 45 A 32 nC 27 nC PG-TO252-3 Type IPD053N06N Package PG-TO252-3 Marking 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 45 ... |
| Document |
 IPD053N06N Data Sheet
PDF 432.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD053N06N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD053N06N3G |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | IPD053N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD053N08N3 |
Infineon |
Power-Transistor |
|
| 5 | IPD053N08N3G |
Infineon Technologies |
Power-Transistor |
|