and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 30 4.8 90 V mΩ A
PG-TO252-3-11
Type IPD05N03LB G
Package PG-TO252-3-11
Ordering Code Q67042-S4262
Marking 05N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
2 | IPD05N03LBG |
Infineon Technologies |
OptiMOS2 Power-Transistor | |
3 | IPD050N03L |
Infineon Technologies |
MOSFET | |
4 | IPD050N03L |
INCHANGE |
N-Channel MOSFET | |
5 | IPD050N03LG |
Infineon Technologies |
MOSFET | |
6 | IPD050N10N5 |
INCHANGE |
N-Channel MOSFET | |
7 | IPD050N10N5 |
Infineon |
MOSFET | |
8 | IPD052N10NF2S |
Infineon |
MOSFET | |
9 | IPD053N06N |
Infineon |
Power-Transistor | |
10 | IPD053N06N |
INCHANGE |
N-Channel MOSFET | |
11 | IPD053N06N3G |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | IPD053N08N3 |
INCHANGE |
N-Channel MOSFET |