IPD053N08N3G - Infineon Technologies

IPD053N08N3G Power-Transistor

IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90 • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application previous engineering samp.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 V mW A Type IPD053N08N3 G Package Marking PG-TO252-3 053N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Cont.