Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•FastswitchingMOSFETforSMPS
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel,logiclevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Avalancherated
•Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
5
mΩ
ID
50
A
DPAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD050N03L G
Package PG-TO252-3
Marking 050N03L
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev..
IPD050N03L - INCHANGE
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD050N03LG |
Infineon Technologies |
MOSFET |
|
| 2 | IPD050N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD050N10N5 |
Infineon |
MOSFET |
|
| 4 | IPD052N10NF2S |
Infineon |
MOSFET |
|
| 5 | IPD053N06N |
Infineon |
Power-Transistor |
|
| 6 | IPD053N06N |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD053N06N3G |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 8 | IPD053N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD053N08N3 |
Infineon |
Power-Transistor |
|
| 10 | IPD053N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPD05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 12 | IPD05N03LB |
Infineon Technologies |
OptiMOS2 Power-Transistor |
|