IPC90N04S5L-3R3 OptiMOS™-5 Power-Transistor Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 3.3 mW 90 A PG-TDSON-8-33 .
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary VDS RDS(on),max ID
40 V 3.3 mW 90 A PG-TDSON-8-33
1 1
Type IPC90N04S5L-3R3
Package
Marking
PG-TDSON-8-33 5N04L3R3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPC90N04S5-3R6 |
Infineon |
Power-Transistor | |
2 | IPC014N03L3 |
Infineon |
MOSFET | |
3 | IPC020N10L3 |
Infineon |
MOSFET | |
4 | IPC022N03L3 |
Infineon |
MOSFET | |
5 | IPC028N03L3 |
Infineon |
MOSFET | |
6 | IPC042N03L3 |
Infineon |
MOSFET | |
7 | IPC045N10L3 |
Infineon |
MOSFET | |
8 | IPC045N10N3 |
Infineon |
MOSFET | |
9 | IPC045N25N3 |
Infineon |
MOSFET | |
10 | IPC055N03L3 |
Infineon |
MOSFET | |
11 | IPC100N04S4-02 |
Infineon |
Power-Transistor | |
12 | IPC100N04S5-1R2 |
Infineon |
Power-Transistor |