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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforawiderangeofapplications
•N-Channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
2.4
mΩ
ID
161
A
Qoss
105
nC
QG
89
nC
D²PAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB024N08NF2S
Package PG-TO263-3
Marking 024N08NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB024N08N5 |
Infineon |
MOSFET |
|
| 2 | IPB024N10N5 |
Infineon |
MOSFET |
|
| 3 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 4 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 5 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 8 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 9 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPB022N12NM6 |
Infineon |
MOSFET |
|
| 12 | IPB023N04N |
INCHANGE |
N-Channel MOSFET |
|