Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•N-channel,normallevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowreverserecoverycharge(Qrr)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Optimizedforhighfrequencyswitchingandsynchronousrectification
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
2.2
mΩ
ID
167
A
Qo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 2 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 3 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 6 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 7 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPB023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPB023N04N |
Infineon |
Power Transistor |
|
| 11 | IPB023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPB024N08N5 |
Infineon |
MOSFET |
|