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Features •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters .
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•100%Avalanchetested
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
4.1
mΩ
ID 70 A
OptiMOSª3Power-Transistor,40V IPA041N04NG
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA041N04N G
Package PG-TO220-FP
Marking 041N04N
RelatedLinks -.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPA041N04N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPA040N06N |
Infineon |
MOSFET |
|
| 3 | IPA040N06N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPA045N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPA045N10N3 |
Infineon |
MOSFET |
|
| 6 | IPA045N10N3G |
Infineon Technologies |
MOSFET |
|
| 7 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPA029N06N |
Infineon |
MOSFET |
|
| 9 | IPA029N06N |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPA030N10N3 |
Infineon |
Power-Transistor |
|
| 12 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor |
|