IAUC120N04S6N006 |
Part Number | IAUC120N04S6N006 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IAUC120N04S6N006 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.6 mW 120 A PG-TDSON-8-53 • N-channel - Enha... |
Features |
• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.6 mW 120 A PG-TDSON-8-53 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUC120N04S6N006 PG-TDSON-8-53 6N04N006 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current5) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Ope... |
Document |
IAUC120N04S6N006 Data Sheet
PDF 937.00KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IAUC120N04S6N008 |
Infineon |
Power Transistor | |
2 | IAUC120N04S6N009 |
Infineon |
Power Transistor | |
3 | IAUC120N04S6N010 |
Infineon |
Power Transistor | |
4 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
5 | IAUC120N04S6L008 |
Infineon |
Power Transistor |