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• OptiMOS™ power MOSFET for automotive applications
• N-channel
– Enhancement mode
– Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
Type IAUC120N06S5N011
60 V 1.12 mΩ 310 A
Package PG-TDSON-8-53
PG-TDSON-8-53
1 1
8765 1234
M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IAUC120N06S5N017 |
Infineon |
Power Transistor |
|
| 2 | IAUC120N06S5L022 |
Infineon |
Automotive MOSFET |
|
| 3 | IAUC120N06S5L032 |
Infineon |
Power Transistor |
|
| 4 | IAUC120N04S6L005 |
Infineon |
Power Transistor |
|
| 5 | IAUC120N04S6L008 |
Infineon |
Power Transistor |
|
| 6 | IAUC120N04S6L009 |
Infineon |
Power Transistor |
|
| 7 | IAUC120N04S6N006 |
Infineon |
Power Transistor |
|
| 8 | IAUC120N04S6N008 |
Infineon |
Power Transistor |
|
| 9 | IAUC120N04S6N009 |
Infineon |
Power Transistor |
|
| 10 | IAUC120N04S6N010 |
Infineon |
Power Transistor |
|
| 11 | IAUC100N04S6L020 |
Infineon |
Power Transistor |
|
| 12 | IAUC100N04S6L025 |
Infineon |
Power Transistor |
|