HN29V1G91T-30 - Renesas Technology

HN29V1G91T-30 128M X 8-bit AG-AND Flash Memory

The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming. Features • On-board single.

Features

• On-board single power supply: VCC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Register: (2048+64) bytes × 4 Bank
• Multi level memory cell  2bit/cell
• Automatic program  Page program  Multi bank program  Cache program  2 page cache program
• Automatic Erase  Block Erase  Multi Bank Block Erase
• Access time  Memory array to register (1st access time): 120 µs max  Serial access: 35 ns min Rev.4.00, Jul.20.2004, pa.