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HN29V1G91T-30 |
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| Part Number | HN29V1G91T-30 |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND)... |
| Features |
• On-board single power supply: VCC = 2.7 V to 3.6 V • Operation Temperature range: Ta = 0 to +70°C • Memory organization Memory array: (2048+64) bytes × 16384 page × 4 Bank Page size: (2048+64) bytes Block size: (2048+64) bytes × 2 page Page Register: (2048+64) bytes × 4 Bank • Multi level memory cell 2bit/cell • Automatic program Page program Multi bank program Cache program 2 page cache program • Automatic Erase Block Erase Multi Bank Block Erase • Access time Memory array to register (1st access time): 120 µs max Serial access: 35 ns min Rev.4.00, Jul.20.2004, pa... |
| Document |
 HN29V1G91T-30 Data Sheet
PDF 1.55MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HN29V25611A |
Renesas Technology |
256M AND type Flash Memory More than 16057-sector |
|
| 2 | HN29V25611ABP |
Hitachi |
256M AND Type Flash Memory |
|
| 3 | HN29V25611AT-50H |
Hitachi |
256M AND Type Flash Memory |
|
| 4 | HN29V2G74WT-30 |
Renesas Technology |
AG-AND Flash Memory |
|
| 5 | HN29V51211 |
Hitachi Semiconductor |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
|