The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without complex external control. HN29WT800 Series, HN29WB.
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Access time: 80/100/120 ns (max)
• Low power dissipation: ICC = 30 mA (max) (Read) ICC = 200 µA (max) (Standby) ICC = 40 mA (max) (Program) ICC = 40 mA (max) (Erase) ICC = 1 µA (typ) (Deep powerdown)
• Automatic page programming: Programming time: 25 ms (typ) Program unit: 128 word
• Automatic erase: Erase time: 50 ms (typ) Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter block; 4-kword/8-kbyte × 2 Main block; 16-kword/32-kbyte × 1 32-kword/64-kbyte × 15 This product is compatible with M5M29FB/T800xx by Ltd. Mi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HN29W12811 |
Hitachi Semiconductor |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | |
2 | HN29W12814A |
Hitachi |
128M and Type Flash Memory More than 16057 Sector X 2 | |
3 | HN29W12814ATT-50 |
Hitachi |
128M and Type Flash Memory More than 16057 Sector X 2 | |
4 | HN29W25611 |
Hitachi Semiconductor |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | |
5 | HN29W256H02TE-1 |
Hitachi |
Controller | |
6 | HN29WB800 |
Hitachi Semiconductor |
(HN29WB800 / HN29WT800) CMOS Flash Memory | |
7 | HN29V1G91T-30 |
Renesas Technology |
128M X 8-bit AG-AND Flash Memory | |
8 | HN29V25611A |
Renesas Technology |
256M AND type Flash Memory More than 16057-sector | |
9 | HN29V25611ABP |
Hitachi |
256M AND Type Flash Memory | |
10 | HN29V25611AT-50H |
Hitachi |
256M AND Type Flash Memory | |
11 | HN29V2G74WT-30 |
Renesas Technology |
AG-AND Flash Memory | |
12 | HN29V51211 |
Hitachi Semiconductor |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |