The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial availab.
• On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
• Organization AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors) Data register: (2048 + 64) bytes
• Multi-level memory cell 2 bit/per memory cell
• Automatic programming Sector program time: 1.0 ms (typ) System bus free Address, data latch function Internal automatic program verify function Status data polling function
• Automatic erase Single sector erase time: 1.0 ms (typ) System bus free Internal automatic erase verify function Status data polling function Preliminary: The specification of this.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HN29V1G91T-30 |
Renesas Technology |
128M X 8-bit AG-AND Flash Memory | |
2 | HN29V25611A |
Renesas Technology |
256M AND type Flash Memory More than 16057-sector | |
3 | HN29V25611ABP |
Hitachi |
256M AND Type Flash Memory | |
4 | HN29V25611AT-50H |
Hitachi |
256M AND Type Flash Memory | |
5 | HN29V2G74WT-30 |
Renesas Technology |
AG-AND Flash Memory | |
6 | HN29W12811 |
Hitachi Semiconductor |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | |
7 | HN29W12814A |
Hitachi |
128M and Type Flash Memory More than 16057 Sector X 2 | |
8 | HN29W12814ATT-50 |
Hitachi |
128M and Type Flash Memory More than 16057 Sector X 2 | |
9 | HN29W25611 |
Hitachi Semiconductor |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | |
10 | HN29W256H02TE-1 |
Hitachi |
Controller | |
11 | HN29WB800 |
Hitachi Semiconductor |
(HN29WB800 / HN29WT800) CMOS Flash Memory | |
12 | HN29WT800 |
Hitachi Semiconductor |
(HN29WB800 / HN29WT800) CMOS Flash Memory |