HN29V2G74WT-30 - Renesas Technology

HN29V2G74WT-30 AG-AND Flash Memory

The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology .

Features

• On-board single power supply: VCC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank × 2  Page size: (2048+64) bytes × 2  Block size: (2048+64) bytes × 2 page × 2  Page Register: (2048+64) bytes × 4 Bank × 2
• Multi level memory cell  2bit/cell
• Automatic program  Page program  Multi bank program  Cache program  2 page cache program
• Automatic Erase  Block Erase  Multi Bank Block Erase
• Access time  Memory array to register (1st access time): 120 µs max  Serial access: 35 ns min Rev.2.00,.