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The HM621664HB is an asynchronous high speed static RAM organized as 64-kword × 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffe.
• Single 5 V supply
• Access time: 15/20 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• 400-mil 44-pin SOJ package
• Center VCC and VSS type pinout
Ordering Information
Type No. HM621664HBJP-15 HM621664HBJP-20 HM621664HBLJP-15 HM621664HBLJP-20
Access time
15 ns 20 ns
15 ns 20 ns
Package 400-mil 44-pin plastic SOJ (CP-44D)
HM621664HB Series
Pin Arrangement
HM621664HBJP/HBLJP Series
A4 1
A3 2
A2 3
A1 4
A0 5
CS 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
VCC VSS I/O5
11 12 13
I/O6 14.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM6216 |
H&M semi |
positive voltage regulators |
|
| 2 | HM6216255H |
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) |
|
| 3 | HM6216255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 4 | HM6216255HI |
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) |
|
| 5 | HM6216514I |
Renesas |
8M SRAM |
|
| 6 | HM621100A |
Hitachi |
1048576 word / 1 Bit High Speed CMOS Static RAM |
|
| 7 | HM621400H |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 8 | HM621400HC |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 9 | HM6215 |
H&M Semiconductor |
Fast Transient Response LDO |
|
| 10 | HM6203 |
H&M semi |
High Input Voltage LDO Linear Regulators |
|
| 11 | HM6207 |
H&M semi |
ultra sensitive hall effect switch |
|
| 12 | HM6207H |
Hitachi |
256K High Speed SRAM |
|