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The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in .
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• Single 5.0 V supply: 5.0V ± 10 % Fast access time: 55 ns (Max) Power dissipation: Active: 10 mW/MHz (Typ) Standby: 7.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. Temperature range:
–40 to +85°C
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HM6216514I Series
Ordering Information
Type No. HM6216514LTTI-5SL Access time 55 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DE)
2
HM62162514I Series
Pin Arrangement
44-pin TSOP A4 A3 A2 A1 A0 CS I/O0 I/O1 I/O2 I/O3 VCC VSS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM6216 |
H&M semi |
positive voltage regulators |
|
| 2 | HM6216255H |
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) |
|
| 3 | HM6216255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 4 | HM6216255HI |
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) |
|
| 5 | HM621664HB |
Hitachi Semiconductor |
1M High Speed SRAM |
|
| 6 | HM621100A |
Hitachi |
1048576 word / 1 Bit High Speed CMOS Static RAM |
|
| 7 | HM621400H |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 8 | HM621400HC |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 9 | HM6215 |
H&M Semiconductor |
Fast Transient Response LDO |
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| 10 | HM6203 |
H&M semi |
High Input Voltage LDO Linear Regulators |
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| 11 | HM6207 |
H&M semi |
ultra sensitive hall effect switch |
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| 12 | HM6207H |
Hitachi |
256K High Speed SRAM |
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