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The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configur.
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 12/15 ns (max)
• Completely static memory No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible All inputs and outputs
• Operating current: 200/180 mA (max)
• TTL standby current: 60/50 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range:
–40 to 85°C
HM6216255HI Series
Ordering Information
Type No. HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Access time 12 ns 15 ns 12 ns 15 ns Package 400-mil 44-pin plastic SOJ (CP-44D) 400-mil 44-pi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM6216255H |
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) |
|
| 2 | HM6216255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 3 | HM6216 |
H&M semi |
positive voltage regulators |
|
| 4 | HM6216514I |
Renesas |
8M SRAM |
|
| 5 | HM621664HB |
Hitachi Semiconductor |
1M High Speed SRAM |
|
| 6 | HM621100A |
Hitachi |
1048576 word / 1 Bit High Speed CMOS Static RAM |
|
| 7 | HM621400H |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 8 | HM621400HC |
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
|
| 9 | HM6215 |
H&M Semiconductor |
Fast Transient Response LDO |
|
| 10 | HM6203 |
H&M semi |
High Input Voltage LDO Linear Regulators |
|
| 11 | HM6207 |
H&M semi |
ultra sensitive hall effect switch |
|
| 12 | HM6207H |
Hitachi |
256K High Speed SRAM |
|