HM621400H - Hitachi Semiconductor

HM621400H 4M High Speed SRAM (4-Mword x 1-bit)

The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in sy.

Features

• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 10/12/15 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current: 200/180/160 mA (max)
• TTL standby current: 70/60/50 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current: 0.8 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout HM621400H Series Ordering Information Type No. HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10.