HM621400HC - Hitachi Semiconductor

HM621400HC 4M High Speed SRAM (4-Mword x 1-bit)

The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62140.

Features

• Single 5.0 V supply: 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current: 140 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current: 0.8 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales.