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High-definition CRT display video output, wide-band amp. Features • High fT: fT=400MHz • High breakdown voltage: VCEO=-120Vmin • Small reverse transfer capacitance and excellent HF response Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .
• High fT: fT=400MHz
• High breakdown voltage: VCEO=-120Vmin
• Small reverse transfer capacitance and excellent HF response
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature .. +150 °C
• Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ...... 1.3 W
• Maximu.
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|---|---|---|---|---|
| 1 | HJ10387 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HJ1109 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HJ112 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HJ117 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HJ12003 |
Signal |
Power Divider |
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| 6 | HJ122 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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| 7 | HJ127 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | HJ13002 |
Hefei Hejing |
NPN Epitaxial Silicon Transistor |
|
| 9 | HJ14C |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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| 10 | HJ1609 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HJ-12002 |
Signal |
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|
| 12 | HJ-12003 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |
|