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TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. Darlington Schematic C Features • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E • Maximum Temperatures Storage Temperature .........
• High DC current gain
• Built-in a damper diode at E-C
Absolute Maximum Ratings (TA=25°C)
B
R1 R2 E
• Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature ..... +150 °C
• Maximum Power Dissipation Total Power Dissipation (TC=25°C) ...
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HJ12003 |
Signal |
Power Divider |
|
| 2 | HJ127 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HJ10387 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HJ1109 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HJ112 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HJ117 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HJ13002 |
Hefei Hejing |
NPN Epitaxial Silicon Transistor |
|
| 8 | HJ14C |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | HJ1538 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | HJ1609 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HJ-12002 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |
|
| 12 | HJ-12003 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |
|