HJ-12002 / 12003 0.01 to 10 MHz Two-Way 0˚ Power Dividers ISOLATION vs. FREQUENCY 30 0.0 INSERTION LOSS vs. FREQUENCY INSERTION LOSS (dB) 18 RETURN LOSS vs. FREQUENCY RETURN LOSS (dB) 21 24 27 30 33 ISOLATION (dB) 32.5 35 37.5 40 42.5 3 6 9 12 15 0.25 0.50 0.75 1.0 3 6 9 12 15 3 6 9 12 15 FREQUENCY (MHz) FREQUENCY (MHz) FREQUENCY (MHz) Guarante.
0 5.08 mm
B (2)
(3) (4) (5) MECH. & ELECT. GND.
28 Tozer Road
• Beverly, MA 01915-5579 Tel. 978.922.0019
• Fax 978.927.9328
www.DataSheet.in
9
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HJ122 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
2 | HJ127 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
3 | HJ10387 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
4 | HJ1109 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
5 | HJ112 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HJ117 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
7 | HJ13002 |
Hefei Hejing |
NPN Epitaxial Silicon Transistor | |
8 | HJ14C |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
9 | HJ1538 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
10 | HJ1609 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
11 | HJ-12002 |
Signal |
(HJ-12002 / HJ-12003) Power Divider | |
12 | HJ-12003 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |