The HJ10387 is designed for general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junction Temperature ........
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HJ1109 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2 | HJ112 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
3 | HJ117 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
4 | HJ12003 |
Signal |
Power Divider | |
5 | HJ122 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HJ127 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
7 | HJ13002 |
Hefei Hejing |
NPN Epitaxial Silicon Transistor | |
8 | HJ14C |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
9 | HJ1538 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
10 | HJ1609 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
11 | HJ-12002 |
Signal |
(HJ-12002 / HJ-12003) Power Divider | |
12 | HJ-12003 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |