Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junction Temperature ..
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HJ1109 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HJ117 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HJ10387 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HJ12003 |
Signal |
Power Divider |
|
| 5 | HJ122 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HJ127 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HJ13002 |
Hefei Hejing |
NPN Epitaxial Silicon Transistor |
|
| 8 | HJ14C |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | HJ1538 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | HJ1609 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HJ-12002 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |
|
| 12 | HJ-12003 |
Signal |
(HJ-12002 / HJ-12003) Power Divider |
|