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HFS7N60 Dec 2005 BVDSS = 600 V HFS7N60 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Sou.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Ava.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFS7N80 |
SemiHow |
800V N-Channel MOSFET |
|
| 2 | HFS730 |
SemiHow |
400V N-Channel MOSFET |
|
| 3 | HFS730F |
SemiHow |
N-Channel MOSFET |
|
| 4 | HFS730S |
SemiHow |
N-Channel MOSFET |
|
| 5 | HFS730U |
SemiHow |
N-Channel MOSFET |
|
| 6 | HFS740 |
SemiHow |
N-Channel MOSFET |
|
| 7 | HFS75N75 |
SemiHow |
75V N-Channel MOSFET |
|
| 8 | HFS10N60S |
SemiHow |
N-Channel MOSFET |
|
| 9 | HFS10N60U |
SemiHow |
N-Channel MOSFET |
|
| 10 | HFS10N65S |
SemiHow |
N-Channel MOSFET |
|
| 11 | HFS10N65U |
SemiHow |
N-Channel MOSFET |
|
| 12 | HFS10N80 |
SemiHow |
N-Channel MOSFET |
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