HFS730 - SemiHow

HFS730 400V N-Channel MOSFET

HFS730 Dec 2005 HFS730 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.8 Ω ID = 5.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.

Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25℃)
  – Continuous (TC = 100℃)
  – Pulsed (Note 1) G.