HFS10N65U HFS10N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested Oct 20.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested
Oct 2013
BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HFS10N65S |
SemiHow |
N-Channel MOSFET | |
2 | HFS10N60S |
SemiHow |
N-Channel MOSFET | |
3 | HFS10N60U |
SemiHow |
N-Channel MOSFET | |
4 | HFS10N80 |
SemiHow |
N-Channel MOSFET | |
5 | HFS11N40 |
SemiHow |
400V N-Channel MOSFET | |
6 | HFS11N80Z |
SemiHow |
800V N-Channel MOSFET | |
7 | HFS12N60S |
SemiHow |
N-Channel MOSFET | |
8 | HFS12N60U |
SemiHow |
N-Channel MOSFET | |
9 | HFS12N65S |
SemiHow |
N-Channel MOSFET | |
10 | HFS12N65U |
SemiHow |
N-Channel MOSFET | |
11 | HFS13N50S |
SemiHow |
N-Channel MOSFET | |
12 | HFS13N50U |
SemiHow |
N-Channel MOSFET |