HFS7N60 |
Part Number | HFS7N60 |
Manufacturer | SemiHow |
Description | HFS7N60 Dec 2005 BVDSS = 600 V HFS7N60 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacit... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) )
RDS(on) typ = 0.96 Ω ID = 7.0 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Extended Safe Operating Area Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V 100% Avalanche Tested
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Ava... |
Document |
HFS7N60 Data Sheet
PDF 287.94KB |
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