HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TC=25 unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HFS7N60 |
SemiHow |
600V N-Channel MOSFET | |
2 | HFS730 |
SemiHow |
400V N-Channel MOSFET | |
3 | HFS730F |
SemiHow |
N-Channel MOSFET | |
4 | HFS730S |
SemiHow |
N-Channel MOSFET | |
5 | HFS730U |
SemiHow |
N-Channel MOSFET | |
6 | HFS740 |
SemiHow |
N-Channel MOSFET | |
7 | HFS75N75 |
SemiHow |
75V N-Channel MOSFET | |
8 | HFS10N60S |
SemiHow |
N-Channel MOSFET | |
9 | HFS10N60U |
SemiHow |
N-Channel MOSFET | |
10 | HFS10N65S |
SemiHow |
N-Channel MOSFET | |
11 | HFS10N65U |
SemiHow |
N-Channel MOSFET | |
12 | HFS10N80 |
SemiHow |
N-Channel MOSFET |