HAT1126RJ - Renesas Technology

HAT1126RJ Silicon P-Channel Power MOSFET

HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G .

Features

• Low on-resistance
• Capable of 4.5 V gate drive www.DataSheet4U.com
• High density mounting
• “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R
  –60 ±20
  –6.0
  –48 HAT1126RJ
  –60 ±20
  –6.0
  –48 Unit V V A A A mJ W W °C °C Avalanche current IAPNote4 —
  –6.0 Note4 Avalanc.