HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G .
• Low on-resistance
• Capable of 4.5 V gate drive www.DataSheet4U.com
• High density mounting
• “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
7 8 D D 5 6 D D 5 7 6
2 G
4 G
8
3 1 2 S1 S3
4
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R
–60 ±20
–6.0
–48 HAT1126RJ
–60 ±20
–6.0
–48 Unit V V A A A mJ W W °C °C
Avalanche current IAPNote4 —
–6.0 Note4 Avalanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HAT1126RJ |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
2 | HAT1127H |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
3 | HAT1108C |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
4 | HAT1110R |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
5 | HAT1111C |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
6 | HAT1139H |
Renesas Technology |
Silicon P-Channel Power MOSFET | |
7 | HAT1000-S |
LEM |
Current Transducer | |
8 | HAT1000-S |
LEM |
(HAT200-S - HAT1500-S) Current Transducer | |
9 | HAT1016R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
10 | HAT1016R |
Renesas |
Silicon P-Channel Power MOSFET | |
11 | HAT1020R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
12 | HAT1020R |
Renesas |
Silicon P-Channel Power MOSFET |