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HAT1126RJ |
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| Part Number | HAT1126RJ |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • Hi... |
| Features |
• Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.0 –48 HAT1126RJ –60 ±20 –6.0 –48 Unit V V A A A mJ W W °C °C Avalanche current IAPNote4 — –6.0 Note4 Avalanc... |
| Document |
 HAT1126RJ Data Sheet
PDF 151.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HAT1126R |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|
| 2 | HAT1127H |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|
| 3 | HAT1108C |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|
| 4 | HAT1110R |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|
| 5 | HAT1111C |
Renesas Technology |
Silicon P-Channel Power MOSFET |
|