HAT1020R - Renesas

HAT1020R Silicon P-Channel Power MOSFET

HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1143-1000 (Previous: ADE-208-435H) Rev.10.00 Sep 07, 2005 1, 2, 3 4.

Features

• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1143-1000 (Previous: ADE-208-435H) Rev.10.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.10.00 Sep 07, 2005 page 1 of 6 HAT1020R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS
  –30 VGSS ±20 Drain current Drain peak current ID ID (pulse) Note 1
  –5
  –40 Body-drain diode reverse drain current IDR
  –5 Channel di.