Current Transducer HAT 500..1500 - S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 500 .. 1500 A VOUT = ± 4 V Preliminary Electrical data Primary nominal r.m.s. current IPN (A) 500 800 1000 1200 1500 Primary current .
• Hall effect measuring principle
• Galvanic isolation between primary
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and secondary circuit Isolation voltage 3000 V Low power consumption Extended measuring range(3 x IPN) Insulated plastic case recognized according to UL 94-V0
VC IC Vd Vb R IS VOUT ROUT RL
Supply voltage (± 5 %) Current consumption R.m.s. voltage for AC isolation test, 50/60Hz, 1mn R.m.s. rated voltage, safe separation Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 k Ω, TA = 25°C Output internal resistance Load resistance
± 15 V ± 15 mA 3 kV 5001) V > 1000 MΩ ± 4V± 40 mV 100 Ω >1 kΩ
Accuracy-Dyna.
Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic is.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HAT1016R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
2 | HAT1016R |
Renesas |
Silicon P-Channel Power MOSFET | |
3 | HAT1020R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
4 | HAT1020R |
Renesas |
Silicon P-Channel Power MOSFET | |
5 | HAT1021R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
6 | HAT1021R |
Renesas |
Silicon P-Channel Power MOSFET | |
7 | HAT1023R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
8 | HAT1023R |
Renesas |
Silicon P-Channel Power MOSFET | |
9 | HAT1024R |
Renesas |
Silicon P-Channel Power MOSFET | |
10 | HAT1024R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET | |
11 | HAT1025R |
Renesas |
Silicon P-Channel Power MOSFET | |
12 | HAT1025R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET |