H7NA80 - STMicroelectronics

H7NA80 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

® STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 7NA80 STH7NA80F I www.DataSheet4U.com s s s s s s s V DSS 800 V 800 V R DS(on) < 1.9 Ω < 1.9 Ω ID 6.5 A 4 A TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MIN.

Features

nsulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2  -65 to 150 150 C C (
•) Pulse width limited by safe operating area October 1998 1/10 STW7NA80-STH7NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTIC.