H7N0308AB - Renesas Technology

H7N0308AB Silicon N-Channel MOSFET

H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flan.

Features

• Low on-resistance RDS (on) = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 6 H7N0308AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. .