H7N0307LM - Renesas

H7N0307LM Silicon N-Channel MOSFET

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7.

Features

• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H7N0307LM S Rev.7.00 Apr 07, 2006 page 1 of 7 H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current .