H7N0203AB - Renesas

H7N0203AB Silicon N-Channel MOSFET

H7N0203AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) =2.4 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 1. Gate 2. Drain (Flange.

Features

• Low on-resistance RDS (on) =2.4 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.5.00 Sep 07, 2005 page 1 of 7 H7N0203AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperat.