H7N0307AB - Hitachi

H7N0307AB Silicon N-Channel MOSFET

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Dr.

Features

• Low on-resistance
• RDS(on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note 2 Note 1 Ratings 30 ±20 60 240 60 90 1.