H7N1005LD - Renesas Technology

H7N1005LD Silicon N Channel MOS FET High Speed Power Switching

H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 85 mΩ typ. www.DataSheet4U.com • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 .

Features

• Low on-resistance RDS (on) = 85 mΩ typ. www.DataSheet4U.com
• Low drive current
• Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H7N1005LD H7N1005LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1005LM Rev.2.00 Oct 16, 2006 page 1 of 8 H7N1005LD, H7N1005LS, H7N1005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain .