GA200TS60UX - International Rectifier

GA200TS60UX Ultra-FastTM Speed IGBT

www.DataSheet.co.kr Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package.

Features

• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDTM antiparallel diodes with ultra-soft recovery
• Industry standard package
• UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.74V @ VGE = 15V, IC = 200A Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Low EMI, requires less snubbing INT-A-PAK Absolute Maximum Ratings Parameters V CES IC ICM ILM.