www.DataSheet.co.kr Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A TJ = 25°C Benefi.
• Generation 4 IGBT Technology
• Standard speed: optimized for hard switching operating frequencies up to 1000 Hz
• Very Low Conduction Losses
• Industry standard package
Standard Speed IGBT
VCES = 600V VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A TJ = 25°C
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG welding machines
INT-A-PAK
Absolute Maximum Ratings Parameters
VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GA200HS60S |
International Rectifier |
Standard Speed IGBT | |
2 | GA200HS60S1PBF |
Vishay Siliconix |
IGBT | |
3 | GA200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
4 | GA200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GA200NS61U |
International Rectifier |
Ultra-Fast Speed IGBT | |
6 | GA200SA60S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | GA200SA60SP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | GA200SA60U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | GA200TD120U |
International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
10 | GA200TS60U |
International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | |
11 | GA200TS60UPBF |
Vishay Siliconix |
IGBT | |
12 | GA200TS60UX |
International Rectifier |
Ultra-FastTM Speed IGBT |