PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) • Industry standard o.
• UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance ( ≤ 5 nH typ.)
• Industry standard outline
C
Ultra-FastTM Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.60V
@VGE = 15V, IC = 100A
n-channel
Benefits
• Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parall.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GA200SA60S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | GA200SA60SP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | GA200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
4 | GA200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GA200HS60S |
International Rectifier |
Standard Speed IGBT | |
6 | GA200HS60S1 |
International Rectifier |
Standard Speed IGBT | |
7 | GA200HS60S1PBF |
Vishay Siliconix |
IGBT | |
8 | GA200NS61U |
International Rectifier |
Ultra-Fast Speed IGBT | |
9 | GA200TD120U |
International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
10 | GA200TS60U |
International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | |
11 | GA200TS60UPBF |
Vishay Siliconix |
IGBT | |
12 | GA200TS60UX |
International Rectifier |
Ultra-FastTM Speed IGBT |