GA200TD120U - International Rectifier

GA200TD120U HALF-BRIDGE IGBT DOUBLE INT-A-PAK

PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antip.

Features

• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage .