www.DataSheet.co.kr GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery .
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
INT-A-PAK
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES IC DC VCE(on) at 200 A, 25 °C 600 V 265 A 1.74 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, welding
• Low EMI,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GA200TS60U |
International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | |
2 | GA200TS60UX |
International Rectifier |
Ultra-FastTM Speed IGBT | |
3 | GA200TD120U |
International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
4 | GA200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GA200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
6 | GA200HS60S |
International Rectifier |
Standard Speed IGBT | |
7 | GA200HS60S1 |
International Rectifier |
Standard Speed IGBT | |
8 | GA200HS60S1PBF |
Vishay Siliconix |
IGBT | |
9 | GA200NS61U |
International Rectifier |
Ultra-Fast Speed IGBT | |
10 | GA200SA60S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | GA200SA60SP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | GA200SA60U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |