This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A
• Low Gate Charge (Typ. 8.7 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T.
isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQP13N10 |
INCHANGE |
N-Channel MOSFET | |
3 | FQP13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
4 | FQP13N06L |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FQP13N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FQP13N50C |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FQP13N50C |
ON Semiconductor |
N-Channel MOSFET | |
8 | FQP13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
11 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
12 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |